PURPOSE: To obtain a photoconductive member having superior photosensitivity by forming a photoconductive layer contg. C and consisting of an amorphous layer contg. Ge distributed ununiformly in the thickness direction and an amorphous layer contg. Si on a support and an amorphous layer contg. Si and N on the photoconductive layer.
CONSTITUTION: A layered region 104 made of an amorphous material contg. ununiformly distributed Ge atoms or further contg. H atoms, halogen atoms, etc. and a photoconductive layered region 105 made of an amorphous material contg. Si atoms or further contg. H atoms, halogen atoms, etc. are successively laminated on a support 101 to form the 1st layer 102. At this time, C atoms are incorporated into the layer 102. More Ge atoms are distributed on the support 101 side in the region 104. The 2nd layer 103 of an amorphous material contg. Si atoms and N atoms is then formed on the layer 102 to obtain the desired photoconductive member 100.
OONUKI YUKIHIKO
OONO SHIGERU
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