PURPOSE: To realize the reduction of oscillating threshold value current, stabilization and longevity of lateral and longitudinal mode by a method wherein the impurities of the second semiconductor layer are diffused in the recession only of a multilayered semiconductor laminated with the first ∼ fourth semiconductor layers down to the substrate.

CONSTITUTION: V type striped grooves are etched on a GaAs substrate so that 111 A surface or 111 B surface may be exposed to a 001 surface of a P type GaAs crystal and then seccessively crystal-grown on the substrate. In other words, an N type Ga0.55Al0.45As 305, a P type Ga0.55Al0.45As 304, a N type Ga0.9 Al0.1As 303 and an N type Ga0.55AlAs 302 are grown. The distortion of crystal is concentrated in the grooves due to the crystal with different grid constants between the P type GaAs substrate and the N type Ga0.55Al0.45As. The V shaped grooves of the N type Ga0.55Al0.45As are reversed to P type conductors due to resultant abnomal diffusion of Zn of the P type Ga0.55Al0.45As. The P-N, N-P junctions are shown at A part in figure. After crystal growth, an AuZn 307 as substrate side ohmic metal and an AuGe 301 as N type ohmic metal may be laminated for heattreatment.