Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JPS60137050
Kind Code:
A
Abstract:
PURPOSE: To reduce AC coupling between electrode terminals by forming the impurity region of conductive type different from a semiconductor substrate under the terminals and maintaining the region at the prescribed potential.
CONSTITUTION: Al wirings 10 are formed to surround a bonding pad 1, and an N+ type impurity region 11 having small resistance is formed under the wirings 10 in shape to coat a cover on a bonding pad 1 from below. The pad 1 is surrounded by the region 11 grounded by the Al wirings 10. Thus, the regions 11 under the pad 1 are AC-coupled therebetween, but since the regions 11 are grounded, the pads 1D, 1E, 1F are not coupled in an AC manner.
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Inventors:
YUYAMA TOSHIO
KATAYOSE MITSURU
SAKURA NARIYUKI
KATAYOSE MITSURU
SAKURA NARIYUKI
Application Number:
JP25139083A
Publication Date:
July 20, 1985
Filing Date:
December 26, 1983
Export Citation:
Assignee:
TOSHIBA KK
International Classes:
H01L21/60; H01L23/482; H01L23/485; (IPC1-7): H01L23/48
Domestic Patent References:
| JPS4968664A | 1974-07-03 |
Attorney, Agent or Firm:
Kiyoshi Inomata (3 outside)