PURPOSE: To improve the efficiency of oscillation by form etching layer containing an active layer on a substrate to which parallel ridges having a conduction type reverse to the substrate are shaped.
CONSTITUTION: Two ridges are formed to the surface of a wafer, in which an N type GaAs blocking layer 10 is grown on the surface of a P type GaAs substrate 9, so that the bottom of a groove reaches to the P type substrate 9 while the blocking layers 10 are left on the outsides of the ridges. A P type clad layer 11, a non-doped active layer 12, an N type clad layer 13 and an N type electrode forming layer 14 are grown continuously on the surface of the substrate 9. An N side ohmic electrode 15 is shaped on the electrode forming layer 14 and a P side ohmic electrode 16 on the substrate side. According to the constitution, currents injected from the substrate side are injected concentrically to the active layer on an oscillating groove section, thus lowering an oscillation threshold, then improving the efficiency of oscillation.
WADA MASARU
SHIMIZU YUUICHI
ITOU KUNIO
| JPS5948974A | 1984-03-21 |