Title:
REACTIVE ION ETCHING SYSTEM
Document Type and Number:
Japanese Patent JPS583985
Kind Code:
A
Abstract:
As etching progresses from one layer of material to another in reactive ion etching systems, the partial pressures of the reaction chamber gas components change. In constant pressure reactive ion etching systems, changes in chamber pressure are corrected by changes in the etchant species flow rate into the reaction chamber. By monitoring flow rate, information is obtained which may be used to identify points where partial pressures change, and latter may, in turn, be used to derive etching points in the material being etched.
Inventors:
BURAIAN HENRII DEJIRETSUTSU
TOOMASU ANSONII GANSAA
TOOMASU ANSONII GANSAA
Application Number:
JP8172382A
Publication Date:
January 10, 1983
Filing Date:
May 17, 1982
Export Citation:
Assignee:
IBM
International Classes:
C23F4/00; H01J37/32; H01L21/302; H01L21/3065; (IPC1-7): C23F1/08
Attorney, Agent or Firm:
Tsukio Okada