PURPOSE: To enable to simply manufacture a multiplex quantum well structure semiconductor laser by a method wherein an evaporation source for a first material provided inclinably to the semiconductor substrate is utilized, and at the same time, the semiconductor substrate is made to revolve and the active region is formed by laminating alternately layers having a larger content of the first material and layers having a smaller content of the first material as a striped step difference part.
CONSTITUTION: An Al evaporation source cell 32 installed inclinably to an n type GaAs substrate 20 is used only at a time when an active region 23a is grown. In case other layers other than the active region 23a are grown, the growths thereof are performed using an evaporating source cell installed almost vertically to the n type GaAs substrate 20 other than the Al evaporation source cell 32. Accordingly, other layers other than the active region 23a and a confinement region 23b, which is formed at the same time as a time when the active region 23a is formed, are almost uniformly grown in the film face of the n type GaAs substrate 20. However, in case the active region 23a is grown, the depositing rate of Al on a striped step difference 29 is changed according to positions of the substrate 20. On the other hand, in a substrate position 20b, AlGaAs is grown, because there is not at all that Al molecular beams are intercepted over the whole in the film face of the substrate 20. As a result, when the substrate 20 is made to revolve, GaAs and AlGaAs are automatically laminated on the step difference 29 according to positions of the substrate 20.
IDE YUUICHI
IWATA HIROSHI
