PURPOSE: To raise the withstand voltage of a barrier up to that of a semiconductor bulk by a method wherein a layer of reacted substance of the metal composing a metallic electrode with a semiconductor is generated deeply under the electrode, when the metallic electrode is mounted partly on the surface of the semiconductor into a Schottky barrier diode.

CONSTITUTION: An N type layer 2 is epitaxially grown on an N+ type Si substrate 1, the entire surface is covered with an insulation film 3, an aperture is bored through the film 3, and the metal 4 composed of W is adhered on the exposed surface of the layer 2 over to the edge of the window, resulting in the formation of the metallic electrode 4. At the same time, the silicide layer 5 of W and Si composing the electrode 4 is generated in the layer 2 under the electrode 4 to the depth of several hundred ∼ several thousand , and the bottom edge of the layer 5 is made to generate a large curvature R. Thus, the silicide layer is made to infiltrate deeply into the layer 2, and rounding is provided to the bottom edge; therefore field concentration does not occur, the withstand voltage of a barrier becomes equal to the bulk withstand voltage of the substrate 1, and accordingly the withstand voltage improves.