Title:
TREATING METHOD FOR WAFER
Document Type and Number:
Japanese Patent JPS5846643
Kind Code:
A
Abstract:
PURPOSE:To improve the uniformity of accuracy on processing in the wafer by mounting a plurality of nozzles spraying a developing liquid or an etching liquid and making the conditions of the treatment of these nozzles independent. CONSTITUTION:In the development of a resist film or the etching treatment of the semiconductor wafer, not only the nozzle 3 to the central section of the wafer 1 but also the nozzles 4 to a peripheral section are set up, and the conditions of the treatment of each nozzle are controlled independently while turning the wafer by means of a wafer chuck 7, thus remarkably improving the uniformity of accuracy on processing in the wafer. An automatic end point detector 5, which consists of a light emitting section 51 and a light receiving section 52 and measures the change of the reflectivity of the section to be treated, is mounted to the central section while a similar automatic end point detector 6 is set up to the peripheral section, the conditions of the treatment of the nozzles corresponding to each are automatically controlled, and uniformity can further be improved.
Inventors:
NISHIOKA KIYUUSAKU
ORISAKA SHINJI
ORISAKA SHINJI
Application Number:
JP14429481A
Publication Date:
March 18, 1983
Filing Date:
September 12, 1981
Export Citation:
Assignee:
MITSUBISHI ELECTRIC CORP
International Classes:
H01L21/30; H01L21/027; H01L21/306; (IPC1-7): H01L21/30
Domestic Patent References:
| JPS5448170A | 1979-04-16 |
Attorney, Agent or Firm:
Masuo Oiwa