Title:
MANUFACTURE OF SEMICONDUCTOR ELEMENT
Document Type and Number:
Japanese Patent JPS6115330
Kind Code:
A
Abstract:
PURPOSE:To form aluminum wirings of high accuracy by a method wherein the surface of an aluminum alloy deposited film of high reflectance is treated by argon ion sputter-etching. CONSTITUTION:An electrode 2 is formed on a wafer substrate 1, and an insulation film 3 is formed thereon; then, an aluminum alloy deposited film 4 is evaporated. In formation of the film 4, in order to reduce the reflectance of its surface, an aluminum alloy is evaporated to the substrate 1 by means of a sputter evaporation device and then treated by argon ion sputter-etching through introduction of argon gas in the evaporation device in that state, thus turning the surface of the film 4 in the form of ground glass. Thereafter, a resist is made to coat and exposed to light through the glass mask 5. In this case, a resist pattern 7 located close to the stepwise difference gets secondary reflection from the side surface of the stepwise difference markedly weakened; therefore, resist patterns of high accuracy can be obtained.
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Inventors:
TAKAHASHI SATOSHI
Application Number:
JP13524584A
Publication Date:
January 23, 1986
Filing Date:
July 02, 1984
Export Citation:
Assignee:
OKI ELECTRIC IND CO LTD
International Classes:
H01L21/302; H01L21/3065; H01L21/3213; H01L21/768; (IPC1-7): H01L21/302
Attorney, Agent or Firm:
Hiroshi Kikuchi
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