PURPOSE: To enable to perform a selective etching on a thin film as well as to simplify the surface processing in the manufacture of a thin film transistor by a method wherein the amorphous silicon film manufactured by performing a plasma chemical vapor-phase growing method is used as a semiconductor layer.
CONSTITUTION: A patterning is performed on the first a-Si layer 8 and the second a-Si layer 10 using a photolithographic method. Then, an etching is performed on the third insulative layer (SiO2 layer) 9 and the first insulative layer (SiO2 layer) 6 by performing BHF using the second a-Si layer 10 and the second insulative layer (SiNx) 7 as a mask. Then, the surface of the first a-Si layer 8 and a gate electrode 2 are exposed. Subsequently, after the second a-Si layer 10 has been removed by dipping into an NaOH or APW aqueous solution, an aluminum source and drain electrode 5 is formed by performing a method ordinarily in use, and a TFT is formed using the a-Si layer 8.
FUJII KENICHI
TAMURA TATSUHIKO
KAMIURA HIROAKI
OGOU SHINICHI
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