PURPOSE: To integrate a capacity in higher density by heat-treating a titanium film formed on an electrode of a polysilicon film into titanium silicide and turning the titanium film on a silicon oxide film into titanium nitride, then removing a titanium nitride film, and nitriding the titanium silicide through heat treatment.

CONSTITUTION: A first electrode 3 of a polysilicon film is formed on a substrate on which a silicon oxide film 2 having a contact hole on a silicon substrate 1. After a titanium film 4 is formed on the electrode 3, heat treatment is carried out in a mixed gas atmosphere of nitrogen and ammonia, which turns the titanium film on the electrode into a titanium silicide 42 and the titanium film on the silicon oxide film 2 into a titanium nitride film 41. Then, it is submerged in a solution which contains ammonia and hydrogen peroxide and the titanium nitride film is selectively removed. When heat treatment is carried out in a mixed gas atmosphere of nitrogen and ammonia and the titanium silicide film 42 is subjected to nitriding treatment, a nitriding treatment film 43 of titanium silicide is formed. Then, after a Ta2O3 film is formed as a capacity insulation film 5, an electrode 6 is formed. This construction makes it possible to integrate a capacity section in higher density.