SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE

Title:

SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE

Document Type and Number:

Japanese Patent JPS60148160

Kind Code:

A

Abstract:

PURPOSE: To improve the degree of integration by forming a resistor in an isolation region.

CONSTITUTION: Active elements Q1, Q2 are formed in an element forming region a1 isolated by an isolation region a2 while a resistor Rb is shaped to the isolation region a2. The resistor Rb is formed by shaping an n plus type diffusion layer 20c to a semiconductor section in the isolation region a2. Accordingly, the resistor requiring a space put out of shape can be formed in an integrated circuit device without lowering the degree of integration of the whole and damaging the regularity of a circuit pattern.

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Inventors:

SHIMIZU ISAO

Application Number:

JP344284A

Publication Date:

August 05, 1985

Filing Date:

January 13, 1984

Export Citation:

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Assignee:

HITACHI LTD

International Classes:

H01L27/04; H01L21/331; H01L21/761; H01L21/822; H01L21/8222; H01L27/06; H01L27/07; H01L29/73; H01L29/732; H03K19/082; (IPC1-7): H01L21/76; H01L27/04; H01L27/08; H01L29/72; H03K19/082

Attorney, Agent or Firm:

Akio Takahashi

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