Title:
PLASMA CVD DEVICE
Document Type and Number:
Japanese Patent JPS607133
Kind Code:
A
Abstract:
PURPOSE:To form a CVD film of a uniform film thickness by a method wherein a mesh electrode is provided so as to cover the surface of a semiconductor wafer. CONSTITUTION:A plurality of planar carbon susceptors 11 are arranged in parallel in a quartz reaction container not illustrated. The mesh electrode 12 is arranged so as to cover the surface of the semiconductor wafer 10 at a distance from the wafer placed in the spot facing of the surface of the susceptor 11. An electrode 12 opposed thereto is connected to a high frequency power source 13. The electrode 12 is formed much smaller in the width (a) of the air gap thereof than the diffusion length of an active reaction species generating by the reduction of reacted gas to plasma due to glow discharge. This manner enables to obtain the CVD film of a uniform film thickness.
Inventors:
KAWATE KEIICHI
YANO SATOSHI
YANO SATOSHI
Application Number:
JP11375083A
Publication Date:
January 14, 1985
Filing Date:
June 24, 1983
Export Citation:
Assignee:
TOSHIBA KK
International Classes:
H01L21/205; H01L21/31; (IPC1-7): H01L21/31; H01L21/205
Domestic Patent References:
| JPS5789217A | 1982-06-03 | |||
| JPS5745339A | 1982-03-15 |
Attorney, Agent or Firm:
Takehiko Suzue
Next Patent: JPS607134