Title:
ION IMPLANTATION BEAM SCANNING METHOD AND DEVICE
Document Type and Number:
Japanese Patent JPS58190023
Kind Code:
A
Abstract:
Method of and apparatus for scanning a charged particle beam over a semiconductor wafer in a prescribed pattern. A triangular waveform, including alternating positive and negative ramp portions of constant slope and controllable time durations, is applied to a horizontal deflection system and produces horizontal scanning of the beam. The time durations of the ramp portions determine the length of the horizontal scan lines and are controlled according to a predetermined sequence so as to provide the prescribed pattern. The triangular waveform is provided by an integrator which receives a square wave from a frequency source of controllable frequency. The predetermined sequence is stored in a read only memory which controls the frequency of the frequency source. At the completion of each ramp portion, a voltage applied to a vertical deflection system is incremented so as to step the beam vertically up or down.
Inventors:
DEIBIDO AASAA ROBAATOSON
NOOMAN REONARUDO TAANAA
NOOMAN REONARUDO TAANAA
Application Number:
JP2389883A
Publication Date:
November 05, 1983
Filing Date:
February 17, 1983
Export Citation:
Assignee:
VARIAN ASSOCIATES
International Classes:
H01J37/302; H01J37/317; H01L21/265; (IPC1-7): H01J37/00; H01L21/265
Domestic Patent References:
| JPS54158861A | 1979-12-15 |
Attorney, Agent or Firm:
Sumio Takeuchi