PURPOSE: To ensure electrical connection between a metallic wiring and a metallic wiring in a contact hole in a contact hole section by forming a second metallic layer having the melting point lower than that of a first metallic layer formed in the contact hole onto the first metallic layer.

CONSTITUTION: A field insulating film 2, a diffusion layer 3, to which an N type impurity is introduced, and a polycrystalline silicon wiring 4 are formed to a P type semiconductor substrate 1. An insulating film 5 is shaped to the surface in 1μm thickness, and etched while using a photo-resist as a mask to form a contact hole 6, and a first metallic layer 7 is formed on the whole surface in 1μm thickness. A second metal 8 is shaped on the whole surface in 0.3μm thickness, and heated at a temperature lower than the melting point of the first metal and higher than the melting point of the second metal to melt the second metal, and the discontinuous section of the first metallic layer in the contact hole section is brought to a continuous state.