PURPOSE: To simplify the manufacturing process of a semiconductor device and to realize easily a multi-product and small-lot production basis by a method wherein a plurality of package bases, which are respectively provided with a semiconductor element, wiring structures, bump electrodes or the like, are formed en bloc on a glass plate of a wafer size by a wafer process.

CONSTITUTION: Semiconductor elements 2, such as a resistor, a diode, a MOS structure and the like, are respectively formed at the formation regions of individual package bases 1a on a glass plate 1. Metal wiring structures 4 are respectively formed on these elements 2 via an interlayer insulating film 3. Parts, which correspond to the end parts and the like of the structures 4, of a passivation film 5 are opened and bump electrodes 6 are projected. Then, pads 8 formed on the surface of a semiconductor pellet 7 are bonded on the electrodes 6. The operation of the bonding is performed by a method wherein the pads 8 of the pellet 7 are respectively superposed on the elements 6, on the electrodes 6 is irradiated with a laser beam L which can penetrate the glass plate 1 from the rear of the plate 1 and the electrodes 6 are heated and melted.