Title:
MANUFACTURE OF INTEGRATED CIRCUIT DEVICE OF THIN FILM STRUCTURE
Document Type and Number:
Japanese Patent JPS58168241
Kind Code:
A
Abstract:
PURPOSE:To obtain a thin film structure which has less stepwise difference between an oxidized part and a thin film pattern with a flat surface by reducing in advance the thickness of the part of the thin film to be oxidized. CONSTITUTION:An Nb or Nb compound thin superconductor film 2 is formed on a substrate 1, and a resist layer 3 of desired pattern is formed on the film 2. Then, the film 2 of the part having no layer 3 is partly cut in a thicknesswise direction. Subsequently, the film 2 of the part which is not covered with the layer 3 is oxidized to form an Nb thin oxidized film 4, and the part which is covered by the layer 3 is allowed to remain as a thin superconductor film pattern 2a. Since the film 2 is increased in volume due to oxidation but the oxidized part is reduced in advance in thickness, almost no stepwise difference is produced between the pattern 2b and the film 4, and when the layer 3 is removed, a thin film structure of flat surface can be obtained.
Inventors:
KOJIMA KAZUYOSHI
Application Number:
JP5242582A
Publication Date:
October 04, 1983
Filing Date:
March 29, 1982
Export Citation:
Assignee:
MITSUBISHI ELECTRIC CORP
International Classes:
H01L21/76; H01L21/316; H01L39/22; (IPC1-7): H01L21/76; H01L39/24
Attorney, Agent or Firm:
Shinichi Kusano