Title:
HYBRID MICROWAVE SUBSYSTEM
Document Type and Number:
Japanese Patent JPS59143406
Kind Code:
A
Abstract:
A hybrid micro-wave subsystem includes a high thermally conductive dielectric substrate having wrapped around a thin-film metalized ground plane such that a center area on the top surface is left exposed. Electrode bonding pads are arranged within this center area to receive respective electrodes of a flip-mounted transistor device. A thin-film matching network is mounted onto the center area and is connected to respective ones of the bonding pads. Discrete components are directly mounted onto the top surface for connection with the transistor device.
Inventors:
FUIRITSUPU DABURU WAREISU
Application Number:
JP1322284A
Publication Date:
August 17, 1984
Filing Date:
January 27, 1984
Export Citation:
Assignee:
MICROWAVE SEMICONDUCTOR CORP
International Classes:
H01P1/00; H01L23/66; H01L25/16; H01P3/08; H03F3/60; (IPC1-7): H01P1/00; H01P3/08; H03F3/195
Attorney, Agent or Firm:
Tomimura Kiyoshi
Previous Patent: JPS59143405
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