Title:
MANUFACTURING APPARATUS FOR SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JPS60136307
Kind Code:
A
Abstract:
PURPOSE:To heat-treat wafers continuously and uniformly, by forming circularly a reactive tube in which materials to be treated can be arrayed and providing a heat treatment section over a part of the circular tube, the reactive tube and the heat treatment section being able to move relatively along the circumference. CONSTITUTION:When a reactive tube 1 is rotated clockwise, every circumference part of the reactive tube 1 is relatively moved in sequence against a heat treatment section 6. If wafers 2 are loaded one by one on a wafer holder 3 in the reactive tube 1 at the loader section 11 in accordance with the revolution of the reactive tube 1, the wafers 2 are arrayed along the circumference in the reactive tube 1 as the revolution proceeds. The arrayed wafers 2 are heated by a heater 10 while passing through the heat treatment section 6. Since reactive gas is supplied in the reactive tube 1 via a gas introducing inlet 8, the prescribed CVD reaction results. The inside of the reactive tube 1 is then being divided into a plural of airtight chambers by a cover plate 7 and isolating walls.
Inventors:
IWAI TOSHIJI
SUZUKI TOSHIMICHI
SUZUKI TOSHIMICHI
Application Number:
JP24405483A
Publication Date:
July 19, 1985
Filing Date:
December 26, 1983
Export Citation:
Assignee:
HITACHI LTD
HITACHI HARAMACHI DENSHI KOGYO
HITACHI HARAMACHI DENSHI KOGYO
International Classes:
H01L21/205; H01L21/22; H01L21/31; (IPC1-7): H01L21/22; H01L21/31
Attorney, Agent or Firm:
Akio Takahashi
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