Title:
SEMICONDUCTOR DEVICE AND METHOD OF PRODUCING SAME
Document Type and Number:
Japanese Patent JPS59114862
Kind Code:
A
Abstract:
A semiconductor (FET) device includes a channel region (16) of a predetermined doping concentration and thickness so as to form an active pn junction between the gate contact and source region of the semiconductor device. The pn junction creates an active intrinsic junction FET (JFET) which may be pinched off in the operating region of the FET device. The resultant combination is a cascode FET-JFET amplifier arrangement, which comprises operating characteristics of longer gate length devices than the FET device alone, maintaining high saturation output resistance and high d.c. voltage gain.
Inventors:
POORU GUREIBU
RICHIYAADO EDOUIN HAWAADO
ROORENSU DEIBUITSUDO JIYATSUKU
PIN KEUN KOO
ROBAATO JIERARUDO SUWARUTSU
RICHIYAADO EDOUIN HAWAADO
ROORENSU DEIBUITSUDO JIYATSUKU
PIN KEUN KOO
ROBAATO JIERARUDO SUWARUTSU
Application Number:
JP23158283A
Publication Date:
July 03, 1984
Filing Date:
December 09, 1983
Export Citation:
Assignee:
WESTERN ELECTRIC CO
International Classes:
H01L27/095; H01L21/8238; H01L27/08; H01L27/092; H01L29/08; H01L29/78; H01L29/808; H01L29/812; (IPC1-7): H01L27/06; H01L27/08; H01L29/78; H01L29/80
Attorney, Agent or Firm:
Masao Okabe