PURPOSE: To reduce the size of a semiconductor device and to eliminate diffusion capacity of the device by epitaxially growing a single crystal Si thicker than the thickness of a dielectric on an amorphous dielectric formed partly on a substrate, and forming an insulated gate FET with the Si as a base.
CONSTITUTION: An oxidized film 32 is fored on a substrate 31 and is patterned. Si is epitaxially grown on the film, and a smooth P type single crystal Si film 33 is accumulated on the Si. A gate oxidized film 34 is formed, an impurity 35 is injected, and a gate electrode 35 is then formed. Arsenic ions are implanted, thereby forming source and drain region 37. An interlayer insulating film 38 is accumulated. In this manner, the size of the element is shortened, and diffusion capacity is reduced.
KUROKI YUKINORI
TANNO YUKINOBU
| JPS5616954B2 | 1981-04-20 |