PURPOSE: To improve the degree of integration and high-frequency performance by forming the extracting section of an electrode in a self-alignment manner.
CONSTITUTION: A silicon dioxide insulating film 2 is formed, while a silicon nitride film 3 is formed by applying a chemical vapor deposition method, and a polycrystalline silicon film 4 to which boron is doped is formed. A silicon dioxide insulating film 5 is formed, and a photo-resist film 6 with a window 7 is formed. The insulating film 5 and the polycrystalline silicon film 4 are etched in succession to form an opening of a similar shape to the window 7, a p type region 8 is formed by applying an ion implantation method, and the polycrystalline silicon film 4 is side-etched. An aluminum film 10 is formed, and the silicon nitride film 3 is etched while using the film 10 as a mask to form a contact window 11. A polycrystalline silicon film 12 is formed through the chemical vapor deposition method, the polycrystalline silicon film 12 is etched until the surface of the silicon nitride film 3 is exposed, and a silicon dioxide insulating film 13 is formed. The polycrystalline silicon film 15 to which arsenic is doped is grown through the chemical vapor deposition method, and an n+ type region 16 is formed by the film 15.
SUGII TOSHIHIRO
FUKANO SATORU
HORIE HIROSHI
| JPS54155778A | 1979-12-08 | |||
| JPS5683063A | 1981-07-07 |