Title:
MANUFACTURE OF SOLID THIN FILM
Document Type and Number:
Japanese Patent JPS6034013
Kind Code:
A
Abstract:
PURPOSE:To obtain a solid thin film with uniform quality by a method wherein a gas to be an energy source is excited by a plasma generated by a glow discharge and the ions and the light in the gas are removed and high energy molecules in semi-stable condition are taken out and decomposition reaction of material gas molecules in a high vacuum chamber is generated with those high energy molecules. CONSTITUTION:Argon gas A and xenon gas B, which are to be the 1st and the 2nd energy sources are supplied from containers 1 and 2 into an optical trap 4 in which a hollow cathode 3 for plasma generation is contained through valves 16 and 17 respectively. A semi-stable condition generating apparatus 6, in which ion collecting electrodes 5 are provided, is protruded from an opening at the center part of the trap 4 and the tip of the apparatus 6 is inserted into a reaction chamber 11. A holder on which a substrate 7 is held is provided in the chamber 11 and a heater 8 is provided outside the chamber 11 and to the backside of the holder. A high vacuum evacuator 9 with a valve 12 and a large capacity exhausting equipment 10 with a valve 13 are connected to the chamber 11. After the above preparation, silane gas C in a container 14 is introduced into the chamber 11 through a valve 15.
Inventors:
ITOU UICHI
KUMADA MASASHI
WASHIDA NOBUAKI
INOUE HAJIME
KUMADA MASASHI
WASHIDA NOBUAKI
INOUE HAJIME
Application Number:
JP14278783A
Publication Date:
February 21, 1985
Filing Date:
August 04, 1983
Export Citation:
Assignee:
KOGYO GIJUTSUIN
International Classes:
H01L21/205; H01L21/31; (IPC1-7): H01L21/263; H01L21/31
Domestic Patent References:
| JPS5362982A | 1978-06-05 | |||
| JPS5667538A | 1981-06-06 |
Attorney, Agent or Firm:
Director, Electronic Technology Research Institute, AIST