Title:
MANUFACTURE OF SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JPS5831535
Kind Code:
A
Abstract:
PURPOSE:To make it possible to manufacture a mesa semiconductor device which is excellent in uniformity and characteristic stability and low in cost, by including the steps of forming a selective coating of a corrosion-resistant wax by means of a screen printing, applying onto the selective coating a thick film of the above-mentioned corrosion-resistant wax having a pattern a size smaller than that of the selective coating, and then melting the corrosion-resistant wax by heating. CONSTITUTION:An oxide film 2 is formed on the surface of a semiconductor substrate 1 by thermal oxidation or the like. Moreover, a pattern is formed by a selective etching. Then, a wax 3 is selectively deposited thereonto by a screen printing, and a wax thick film 4 is arranged in the center of the wax 3. The wax 3 and the wax thick film 4 are united together on heating. With the uniform corrosion-resistant wax film used as a mask, a mesa groove part is etched to form a groove 5. By this method, an essential unetched part of the semiconductor device has no part thin in coating and no pinhole at all, and the wax thick film may be smaller than that in the conventional application method.
Inventors:
ISHII HIROSHI
Application Number:
JP12905381A
Publication Date:
February 24, 1983
Filing Date:
August 18, 1981
Export Citation:
Assignee:
NIPPON ELECTRIC CO
International Classes:
H01L21/306; (IPC1-7): H01L21/306
Attorney, Agent or Firm:
Uchihara Shin