Title:
MANUFACTURE OF SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JPS5927543
Kind Code:
A
Abstract:
PURPOSE:To enable to form a thick individual element isolating SiO2 film, to enhance the threshold voltage of a semiconductor device and to ultrafinely form an individual element isolating SiO2 film by dividing by twice thermal oxidation for forming the SiO2 film. CONSTITUTION:When the first thermal oxidation is performed with an Si3N4 film 3a as a mask after a photoresist film 12 is removed, an individual element isolating base SiO2 film 13 to become a base for forming an individual element isolating SiO2 film having relatively large thickness with a part not formed with an Si3N4 film 3a of a primary SiO2 film 2 by the oxidation of the part under the part not formed with the film 3a of the primary film 2 of the main surface of an n type Si substrate 1 is formed, and an n<++> type impurity diffused layer 14 is simultaneously formed on the part of the n type Si substrate 1 under an individual element isolating base SiO2 film 13. Then, after a photoresist film 16 is removed, the second thermal oxidation is performed with an Si3N4 film 3b as a mask.
Inventors:
NAKAJIMA MORIYOSHI
ANDOU AKIRA
MIYOSHI HIROKAZU
NISHIMOTO AKIRA
ANDOU AKIRA
MIYOSHI HIROKAZU
NISHIMOTO AKIRA
Application Number:
JP13770582A
Publication Date:
February 14, 1984
Filing Date:
August 06, 1982
Export Citation:
Assignee:
MITSUBISHI ELECTRIC CORP
International Classes:
H01L21/76; H01L21/316; H01L21/762; (IPC1-7): H01L21/95
Attorney, Agent or Firm:
Masuo Oiwa