SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF

Japanese Patent JPS6010754

A

PURPOSE:To pick up an impurity diffusion layer internally formed on the surface of substrate through a fine potential transfer channel by a method wherein an insulating thin film is provided on the interface of substrate of a pierced hole made on the substrate extending from the surface of the first conductive type semiconductor substrate to the second conductive type impurity layer to fill the hole with conductive material. CONSTITUTION:A p type silicon substrate 1 is implanted with n type impurity ion from surface to inside to form an n<+> type diffusion wiring layer 2 after activation and firstly growing an SiO2 film 3 on the surface of oxidized substrate 1, an expected hole piercing part forms an opened resist pattern 4. Then the SiO2 film 3 is selectively removed by means of etching process utilizing the resist pattern 4 as a mask and the silicon substrate 1 is selectively removed to make a pierced hole 5 with the bottom reaching the wiring layer 2. Secondly, after removing the resist pattern 4, an oxide film 6 is grown on the side walls and bottom of the pierced hole 5 by means of thermal oxidation. Then an n<+> diffusion layer 2 is exposed on the bottom of the pierced hole 5 by means of removing the part of oxide film 6 on the bottom of the pierced hole 5 leaving an oxide film 6' on the interface with the substrate 1 of said pierced hole 5. Finally the pierced hole 5 formed of the oxide film 6' is filled with n<+> type polycrystalline silicon.

JP2008072135	SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE
JPH0265007	ELECTRONIC CIRCUIT MEMBER AND MANUFACTURE THEREOF

MIZUTANI YOSHIHISA

JP11936783A

January 19, 1985

June 30, 1983

Click for automatic bibliography generation  

TOSHIBA KK

H01L23/52; H01L21/28; H01L21/3205; H01L29/41; (IPC1-7): H01L21/88; H01L21/28

Takehiko Suzue

Previous Patent: The electric vehicle which carries a cooling device and this

Next Patent: JPS6010755