Title:
FORMATION OF FILM OF SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JPS60153125
Kind Code:
A
Abstract:
PURPOSE:To form a reflection preventing film for photolithography of a metallic film without reducing number of processed films per time by forming a transparent film which is hard to take part in a reaction with the metallic film or to fuse into it, on the metallic film continuously by the same cycle of one apparatus at formation of the metallic film. CONSTITUTION:In the embodiment in which an aluminum film and a silicon oxide film are used as the metallic film and the transparent film respectively, a wafer taken in from a load part 1 moves in front of an aluminum target 3 after being heated in a preliminary heating part 2 and it is coated with aluminum of 1mum by spattering of DC magnetron method. The wafer coated with aluminum then moves in front of a silicon oxide target 4 and is subjected to RF spattering of 300Angstrom of silicon oxide film. Then the wafer is taken out from an unload part 5. It is unnecessary to wait when the wafer is cooled and spattering of the silicon oxide film is completed while the following wafer is coated with aluminum.
Inventors:
MORICHIKA YOSHIMITSU
Application Number:
JP881584A
Publication Date:
August 12, 1985
Filing Date:
January 20, 1984
Export Citation:
Assignee:
NIPPON ELECTRIC CO
International Classes:
H01L21/31; G03F7/09; G03F7/20; H01L21/027; (IPC1-7): G03F7/20; H01L21/31
Attorney, Agent or Firm:
Uchihara Shin