Title:
PREPARATION OF SINGLE CRYSTAL
Document Type and Number:
Japanese Patent JPS60176995
Kind Code:
A
Abstract:
PURPOSE:To obtain high-quality single crystal with a few crystal defects and a small amount of impurites, by putting an element of group in a container, controlling a temperarure, growing single crystal from raw material melt while regulating vapor pressure of element of V group in the raw material melt. CONSTITUTION:The seed crystal 6 is supported under the end of the upper shaft 2. The seed crystal 6 is immersed in the raw material melt 5. When the upper shaft 2 is gradually pulled up from the lower shaft 3, the single crystal 7 following the seed crystal 6 is grown. At the lower part of the bottom 1, the element 12 such as As, etc. of group V is laid. In order to control vapor pressure of the element 12 of V group, the temperature in this zone is regulated by the second heater 22. The side wall of the crucible 4 is short, and provided with the partition pipe 16 with a small diameter. The liquid capsuling agent 17 of B2O3 is put in the crucible 4. It in not put in the partition pipe 16. Partial pressure of the element of B group is equilibrated with the atmosphere gas 14 and the raw material melt 5 as a whole. Since the raw material melt 5 is brought into contact with the liquid capsuling agent 17 at the interface 18 of different liquids, so impurities are removed from the raw material melt.
Inventors:
TADA KOUJI
TATSUMI MASAMI
TATSUMI MASAMI
Application Number:
JP3114684A
Publication Date:
September 11, 1985
Filing Date:
February 21, 1984
Export Citation:
Assignee:
SUMITOMO ELECTRIC INDUSTRIES
International Classes:
C30B15/04; C30B27/02; C30B29/40; (IPC1-7): C30B29/40
Domestic Patent References:
| JPS5523239A | 1980-02-19 |
Attorney, Agent or Firm:
Shigeki Kawase