Title:
METHOD AND APPARATUS FOR PULLING COMPOUND SEMICONDUCTOR SINGLE CRYSTAL
Document Type and Number:
Japanese Patent JPS60137891
Kind Code:
A
Abstract:
PURPOSE:To keep the impurity concentration in molten liquid to a constant level from the top to the bottom, in a liquid-encapsulated pulling method using a molten raw material containing impurities, by dissolving undoped polycrystalline raw material or single crystal to the molten raw material. CONSTITUTION:The molten raw material 5 containing impurities is put into the crucible 4, heated with the heater 1, and covered with a liquid capsule 6. The seed crystal 7 is dipped into the molten raw material 5 from above, and a compound semiconductor single crystal 8 is pulled up from the molten liquid 5. During the pulling operation, an undoped polycrystalline material or a single crystal is dipped slowly into the molten liquid 5, and the part contacting with the molten liquid is melted by the heat of the molten liquid to prevent the increase of impurity concentration of the molten liquid. The top of the crystal 9 is supported by the supporting shaft 10. In the case of GaAs, the holding pipe 12 is used to prevent the escape of As from the crystal 9. The crystal 9 is dangled in the holding pipe 12, and further covered with a liquid capsule 16 made of B2O3, which is heated with the B2O3-heater 14.
Inventors:
MORIOKA MIKIO
SHIMIZU ATSUSHI
SHIMIZU ATSUSHI
Application Number:
JP24897183A
Publication Date:
July 22, 1985
Filing Date:
December 24, 1983
Export Citation:
Assignee:
SUMITOMO ELECTRIC INDUSTRIES
International Classes:
C30B15/02; C30B27/02; H01L21/208; (IPC1-7): C30B15/00
Domestic Patent References:
| JPS4710355A | ||||
| JP36015757A |
Attorney, Agent or Firm:
Shigeki Kawase