Title:
TRANSISTOR
Document Type and Number:
Japanese Patent JPS5999768
Kind Code:
A
Abstract:
PURPOSE: To prevent the current amplification ratio from declining regardless of the increased emitter current by means of providing the junction face between emitter and base with wave form.
CONSTITUTION: When a planar type transistor is manufactured, if the junction face between emitter and base is formed into wave form (including approximate form), the junction area is increased remarkably decreasing the current density near the junction face 4. Through these procedures, even if an emitter current is increased, the current amplification ratio higher than conventional one may be secured.
Inventors:
IITAKA YUKIO
Application Number:
JP20979782A
Publication Date:
June 08, 1984
Filing Date:
November 30, 1982
Export Citation:
Assignee:
MATSUSHITA ELECTRIC WORKS LTD
International Classes:
H01L29/73; H01L21/331; H01L29/72; (IPC1-7): H01L29/72
Attorney, Agent or Firm:
Toshimaru Takemoto