Title:
MANUFACTURE OF SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JPS5842251
Kind Code:
A
Abstract:
PURPOSE:To achieve high integration by a method wherein the first groove parts having specific angles of inclination are provided on a semiconductor substrate which is selectively etched to form the second groove parts and then an oxide film is filled between the first groove parts to unite with an insulation film left at the first groove parts to form a wide field region. CONSTITUTION:A thin insulation film 37 is formed on a silicon substrate 31, whereon an antioxidant film 38 is piled. A resist film 39 is patterned in a way that the whole or part of its boundary is placed on buried field insulation films 361, 362, 363 and the antioxidant film 38, the thin insulation film 37 and the silicon substrate 31 are etched to form the second groove parts. Boron is provided by ion implantation to form a p<+> region 41 at the bottom of a groove 40. After the resist film 39 is exfoliated, a field oxide film 42 is formed between buried insulation films 362 and 363 to form a wide field insulation film. Next, the antioxidant film 38 and the thin insulation film 37 are removed by etching to form a field insulation region having arbitrary axes and no steps.
Inventors:
IWAI HIROSHI
Application Number:
JP14077381A
Publication Date:
March 11, 1983
Filing Date:
September 07, 1981
Export Citation:
Assignee:
TOKYO SHIBAURA ELECTRIC CO
International Classes:
H01L29/78; H01L21/306; H01L21/316; H01L21/76; H01L21/762; (IPC1-7): H01L21/306; H01L21/95; H01L29/78
Attorney, Agent or Firm:
Takehiko Suzue