PURPOSE: To make the inter-electrode stray capacity small, and to reduce an influence of a variation of ambient temperatures by constituting a titled sensor so that a moving electrode is insulated and shielded from the part of an epitaxial growth layer by an insulating layer, and an electric field between the moving electrode and a fixed electrode becomes vertical to the electrode surface.
CONSTITUTION: A titled pressure sensor is provided with a pressure leading-in hole which a measured pressure Pm is led in, and a diaphragm is constituted on a substrate 1. A moving electrode layer is constituted on the substrate 1 with an epitaxial growth layer 2 formed by epitaxial growth of an N type silicon single crystal film. A fixed electrode 31 is provided on the surface facing a reference chamber 22, of an insulating cover 3. It is formed so as to surround a discoid moving electrode 41 consisting of an insulating layer 43 formed as a P type semiconductor which has diffused impurities in the shape of a ring on the surface facing the fixed electrode 31 of the epitaxial layer 2, and the N type silicon single crystal film, and a comparison electrode 42 provided in the shape of a concentric circle with the moving electrode 41. This sensor is constituted so that the stray capacity Cs between the moving electrode 41 and the semiconductor substrate 1 becomes small, and the insulating layer 43 functions as a guard electrode, too.
| WO/2016/156162 | CAPACITIVE PRESSURE SENSOR |
| JP4226320 | Pressure transducer and heating method of pressure transducer |
YUKITAKE EIKI
MIYAJI NOBUO
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