Title:
MANUFACTURE OF SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JPS60130123
Kind Code:
A
Abstract:
PURPOSE:To prevent adhesion of resist again by providing a process of treatment supplying a development liquid and a rinse liquid simultaneously between a development process and a rinse process and increasing the rotation speed of the spinner to more than four times the speed in the before or the after process. CONSTITUTION:A negative resist 3 is coated on the SiO2 film 2 on an Si substrate 1, developed after exposure sprayed by approx. 1,000rpm with development liquid, sprayed again with rinse liquid of acetate after about 10sec and treated for about 5sec with increase of the rotation to 4,000rpm or more. In the last stage, spraying of the development liquid is stopped and rinsed with only spraying of the rinse liquid reducing the speed of rotation to 1,000rpm. After about 10sec, spraying of the rinse liquid is also stopped and dried increasing the rotation. In this method, unsatisfactory forming of a resist pattern due to adhesion again 4 of the resist which could never be avoided hitherto is removed and the yield of a semiconductor device can be improved.
Inventors:
INOUE YOSHIAKI
NITSUTA KATSUJI
NITSUTA KATSUJI
Application Number:
JP23720983A
Publication Date:
July 11, 1985
Filing Date:
December 17, 1983
Export Citation:
Assignee:
TOSHIBA KK
International Classes:
H01L21/30; G03F7/30; H01L21/027; (IPC1-7): G03F7/00
Attorney, Agent or Firm:
Eiji Morota