Title:
SEMICONDUCTOR IC DEVICE AND ITS MANUFACTURE
Document Type and Number:
Japanese Patent JPS5943546
Kind Code:
A
Abstract:
PURPOSE:To simplify smoothing the surface of polycrystalline silicon buried grooves or insulating material by a method wherein shallow and deep parts are continuously provided to form the parts where an isolated region with width larger than the depth is expected. CONSTITUTION:After forming a thin SiO2 film 17 on the surface of an Si substrate 7, a P<+> layer 18 as a channel stopper is provided by ion implantation of P type impurity and after removing an Si3N4 film 16 utilized as a mask, another SiO2 film 19 is deposited on the overall surface of the Si substrate 7. Then after coating the surface with resistor SOG (Spin On Glass) 20 as necessary, the surface is smoothed by sputter etching. Later an N<+> type collector. contact region 22 is formed and further another Si3N4 film 21 is formed on the surface. Finally a P type base region 23 and an N<+> type emitter region 24 are respectively formed by means of the known ion implanting technology.
Inventors:
UCHIDA AKIHISA
OKADA DAISUKE
TAKAKURA TOSHIHIKO
TAMAOKI YOUICHI
OKADA DAISUKE
TAKAKURA TOSHIHIKO
TAMAOKI YOUICHI
Application Number:
JP15391182A
Publication Date:
March 10, 1984
Filing Date:
September 06, 1982
Export Citation:
Assignee:
HITACHI LTD
International Classes:
H01L21/76; H01L21/331; H01L21/762; H01L29/73; (IPC1-7): H01L29/72
Attorney, Agent or Firm:
Katsuo Ogawa (1 person outside)