Title:
PLASMA ETCHING DEVICE
Document Type and Number:
Japanese Patent JPS5940534
Kind Code:
A
Abstract:
PURPOSE:To enhance detection accuracy of the plasma etching finishing point by a method wherein a detection light path for light collection is provided at the center of an upper electrode, light emission on the whole wafers are collected, and the radiation spectral signal of a favorable SN ratio is obtained. CONSTITUTION:Light of the emitting parts 16 of the materials 9 to be etched in plasma between parallel plate electrodes 18, 7 is led to a spectroscopic analyzer 14 through a glass cylinder 19, a pyramidal mirror 20, a lens 21, and an optical fiber 22. According to this construction, when the substrates 9 of the plural number are to be etched by plasma at the same time, lights on the whole substrates are condensed effectively to enhance efficiency, and the SN ratio of the detected signal of the spectroscopic analyzer can be enhanced by that much. Accordingly, detection precision of the etching finishing point can be enhanced sharply, and yield can be enhanced.
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Inventors:
AIUCHI SUSUMU
OOTSUBO TOORU
OOTSUBO TOORU
Application Number:
JP14930682A
Publication Date:
March 06, 1984
Filing Date:
August 30, 1982
Export Citation:
Assignee:
HITACHI LTD
International Classes:
H01L21/302; H01J37/32; H01L21/3065; (IPC1-7): H01L21/302
Attorney, Agent or Firm:
Toshiyuki Usuda
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