Title:
HEAT TREATMENT AND HEAT TREATMENT DEVICE
Document Type and Number:
Japanese Patent JPS5856341
Kind Code:
A
Abstract:
PURPOSE:To avoid back diffusion, while to enable to perform the heat treatment under reduced pressure of semiconductor wafers by a method wherein the equivalent sectional area at the opening part of a core tube is made small, while flanges are introduced on the core tube. CONSTITUTION:A gas introducing port 2 of the first core tube 8 to be heated is formed at one edge thereof, and the first flange 9 is formed on the opening part 3 at the edge or another side. The second flange 11 is formed on the second core tube 10 having the outside diameter smaller than the inside diameter of the tube 8. A boat 7 loading the wafers is set in the semicircular part 12. Inert gas is made to flow into the port 2, and the tube 10 is inserted into the tube 8 making inert gas to flow out from a gas exhausting port 5 provided in the tube 10 and from a gap formed between the tubes 8, 10. The flow rate of gas and gas pressure being sufficient to prevent back diffusion of the air can be held by the passage for gas thereof.
Inventors:
KAWASAKI KIYOHIRO
KAGAWA KEIICHI
KAGAWA KEIICHI
Application Number:
JP15560181A
Publication Date:
April 04, 1983
Filing Date:
September 29, 1981
Export Citation:
Assignee:
MATSUSHITA ELECTRIC IND CO LTD
International Classes:
H01L21/22; H01L21/31; (IPC1-7): H01L21/22
Domestic Patent References:
| JPS56122124A | 1981-09-25 | |||
| JPS507420A | 1975-01-25 |
Foreign References:
| US3755016A | 1973-08-28 |
Attorney, Agent or Firm:
Akira Kobiji (2 outside)