PURPOSE: To improve the reliability of high density magnetic bubble element by making the longest distance w of transfer passage measured in the vertical direction to the linear part of a minor loop w/d>10 for the bubble diameter (d) of a magnetic medium.
CONSTITUTION: It is necessary to make w/d>10 to improve characteristic of inner turn corner part. However, under this condition, the distance between ion implantation minor loops 6, 7 becomes longer and a cell size (area per bit) increases and goes reverse to the direction to make the element high in density. To reconcile making the element high in density and securing of operation margin, inner turn corner part that satisfies w/d>10 can be realized by placing a linear transfer passage having oyter turn corner parts 10, 11 between two linear transfer passages constituting inner turn corner parts 10, 11. In the inner turn corner part 12, w/d>10 can be satisfied by making a part of the linear transfer passage oblique.
IKEDA HITOSHI
SUZUKI MAKOTO
TAKEUCHI TERUAKI
