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Patent Searching and Data


Title:
TESTING OF SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JPS5920869
Kind Code:
A
Abstract:

PURPOSE: To achieve tests of an saturated large current and non-saturated voltage by interrupting a power source input in a short time less than the thermal time constant.

CONSTITUTION: A power source 7 of the max. voltage is connected to a power source terminal of a semi-conductor device 5 to be tested and a load impedance 6 through which the max. current flows when an input source 8 is connected to an input terminal to saturate the device 5 amply is connected to an input terminal. Then, when the power source 8 is interrupted for a short time less than the time constant of the device 5, tests for saturated large current and non- saturated high voltage of the device 5 can be performed alternately without temperature changes due to heat generation.


Inventors:
ITOU SHIGERU
Application Number:
JP13097782A
Publication Date:
February 02, 1984
Filing Date:
July 27, 1982
Export Citation:
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Assignee:
NIPPON ELECTRIC CO
International Classes:
G01R31/26; (IPC1-7): H01L21/66
Attorney, Agent or Firm:
Shin Uchihara