Login| Sign Up| Help| Contact|

Patent Searching and Data


Title:
SEMICONDUCTOR LASER AND MANUFACTURE THEREOF
Document Type and Number:
Japanese Patent JPS6022392
Kind Code:
A
Abstract:

PURPOSE: To lessen the coupling loss with optical fibers in a distribution feedback type semiconductor laser by a method wherein the laser is made into a structure, wherein the divergence angle of beams is smaller and the outgoing beam mode is brought nearer to a circular one.

CONSTITUTION: A layered formation; which consists of a P type contact layer 2, P type antimeltback layer 3, and active layer 4, an N- type waveguide layer 5 and an N type substrate 6; is formed, and N type buried layers 8 and P type buried layers 9 are formed on both sides thereof. After these layers are formed, the top surface of the P type contact layer 2 is masked with a resist, etc., leaving the wedge-shaped open part intact, and an almost conical cavity is formed by performing an etching for forming the cavity by epitaxially growing a buried and enlarged waveguide path 10. Lastly, a P-side electrode 1 and an N-side electrode 7 are respectively formed on the top surface and the bottom surface. The front 11 of the buried and enlarged waveguide path 10 is an outgoing end.


Inventors:
SASAYA YUKIHIRO
NISHIWAKI YOSHIKAZU
MATSUOKA HARUJI
NISHIURA YOUZOU
OKAMOTO KENJI
Application Number:
JP13175383A
Publication Date:
February 04, 1985
Filing Date:
July 18, 1983
Export Citation:
Click for automatic bibliography generation   Help
Assignee:
SUMITOMO ELECTRIC INDUSTRIES
International Classes:
H01S5/00; H01S5/12; (IPC1-7): H01S3/18
Attorney, Agent or Firm:
Shigeki Kawase



 
Previous Patent: Ink-jet recording device

Next Patent: JPS6022393