PURPOSE: To uniformize the characteristics of each photosensor and to enable to read out signal at a high speed without using a correcting circuit by a method wherein the refractive index of the lowest layer of the laminated film of two layers and more, which respectively have the refractive index different from one another and constitute the photoconductive layer of each photosensor, is specified.
CONSTITUTION: A quartz glass substrate or a partially glazed ceramic substrate and so forth are used as the substrate 1 for the photosensor array in the image readout device. The refractive index of the a-Si undercoating layer 2 of the photoconductive layer shall be one of 3.2 or less, and the refractive index of an a-Si layer 3 shall be one larger than 3.2 and shall be desirably one of 3.4 or thereabouts. N+ type layers 4 and 11 are respectively an ohmic contact layer. Common electrodes 5, individual electrodes 6 and signal lead-out conductors 12 shall be all formed of a conductive film of Al and so forth, conductive layers 7 and 8 shall be formed of a conductive film of Cr and so forth, and an insulating layer 9 shall be formed of an insulative inorganic film of SiH: H and so forth or various insulative organic resin films. A semiconductor layer 10 is provided, and a capacitor part 13 to be used for storing charge and a switching transistor part 14 to be used for taking out the charge stored in the capacitor part are respectively constituted.
KOMATSU TOSHIYUKI
SHOJI TATSUMI
KAMIO MASARU
SEKIMURA NOBUYUKI
| JPS56167370A | 1981-12-23 | |||
| JPS5943568A | 1984-03-10 | |||
| JPS57173256A | 1982-10-25 | |||
| JPS56138967A | 1981-10-29 | |||
| JPS56138968A | 1981-10-29 | |||
| JPS55160478A | 1980-12-13 | |||
| JPS598368A | 1984-01-17 |
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