Title:
MANUFACTURE OF SEMICONDUCTOR SUBSTRATE
Document Type and Number:
Japanese Patent JPS5812321
Kind Code:
A
Abstract:
PURPOSE:To diffuse impurity on the lower surface of an Si film, prevent the generation of channels in the neighborhood of the interface and obtain a substrate with less leakage current, by adhering an Si film, thus irradiating by laser, after conductive impurity ions are previously implanted onto the surface of the insulating film. CONSTITUTION:An oxide film 2 is formed on the Si substrate 1. Next, boron ions 3 are implanted onto the surface of the oxide film 2. Implanting energy is 50keV and implantation amount is approx. 10<13> to 10<14>/cm<2>. Next, an Si film 4 is adhered, and then laser light 5 is irradiated. As the laser light, in case of using the pulse wave by NdiYAG laser, the irradiating energy is appropriate in approx. 2 to 3J/cal; in case of using continuous wave by argon ion laser, the energy is enough in approx. 10<5> to 10<7>W/cal. Thus, the grain diameter of the Si film 4 is hypertrophied resulting in the prevention of channel generation. Therefore, a substrate with high mobility and low leakage current can be obtained.
Inventors:
NAKAMURA KUNIO
Application Number:
JP11139081A
Publication Date:
January 24, 1983
Filing Date:
July 16, 1981
Export Citation:
Assignee:
NIPPON ELECTRIC CO
International Classes:
H01L27/00; H01L21/20; H01L21/265; H01L21/86; (IPC1-7): H01L21/265; H01L21/324; H01L21/84
Attorney, Agent or Firm:
Uchihara Shin