PURPOSE: To prevent the decrease in the contrast of an image sensor by employing a low resistance metallic film for a group electrode and a thin film resistance for a selecting electrode, thereby reducing the input resistance.
CONSTITUTION: A photoconductive film 6 a group electrode 7 and a selecting electrode 8 are formed as an operating unit. A plurality of elements are formed in a main scanning direction, a photconductive film 6 is formed as the operating unit of the elements at its longitudinal direction in a sub scanning direction, and the electrode 7 is formed with two as a set at the center of thin metallic films such as NiCr-Au (having approx. 3,000 thick). The electrode 8 is formed at both sides of the film 6 at the thin film resistor (having approx. 300 thick) such as NiCr, Cr-SiO, Cr-Si or the like. As a result, the group electrode 7 of the one electrode of the element become substantially 0 ohm, and only one side selecting electrode 8 is formed of the resistance film, and the input resistance accordingly becomes small.
YAMADA FUMIAKI
NAKA TOSHIAKI
