PURPOSE: To improve the yield of semiconductor elements by measuring photoresist film pressure and controlling exposure time.
CONSTITUTION: This system consists of a resist drying temperature and time measuring device 15, a device 100 which inputs the kind of resist and exposure light wave length, a device 16 for measuring film thickness d0, a computer 200 (arithmetic routine 11 for uniform irradiation critical exposure energy ETU, arithmetic routine 12 for program exposure, arithmetic routine 13 for exposure, and arithmetic routine 14 for development time), a measuring device 17 for irradiation intensity I0, a controller 18 for exposure time, and a controller 19 for development time. Then, ETU is found from the absorption coefficient of the photoresist, optical characteristics of light sensitivity, development characteristics, and coated film thickness. Exposure energy D is found from the ETU and the exposure time is calculated for control, obtaining a uniform resist pattern even when the film thickness varies.
TANUMA MASAYA
MOROOKA YASUO