CONTROLLING METHOD OF INTRODUCING CRYSTAL DEFECT INTO SILICON WAFER

Japanese Patent JPS6066827

A

PURPOSE:To readily and accurately predict heat treating conditions necessary to obtain desired defect density by heat treating Si single crystal having clear hysteresis under various treating conditions to obtain defective nucleus density, drawing equal density curve of each hysteresis, and using this graph. CONSTITUTION:A single crystal having clear hysteresis such as heat hysteresis or O2 density is disposed in an inert gas atmosphere, defective nucleus is introduced under the conditions of 650-1,050 deg.C and 2min-300hr, the nucleus is then grown under the conditions of 1,000-12,000 deg.C, 10min-10hr, and the defect density is measured by selective etching. Equal density curve of defect density is drawn at every hysteresis on a temperature-time graph at the heat treating time of the first stage from many samples. Heat treating conditions necessary to form desired defect density is predicted for a single crystal to be introduced with new defect by the graph. According to this method, the prediction is accurate and ready, and the desired defect density can be accurately introduced to the wafer in a short time, and the irregularity can be reduced.

SHIMANUKI YASUSHI
SUGA HISAAKI
KAINUMA MITSUHIRO

JP17678183A

April 17, 1985

September 24, 1983

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MITSUBISHI METAL CORP

H01L21/322; (IPC1-7): H01L21/322

JPS5538098A

1980-03-17

Masatake Shiga

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