Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JPS599977
Kind Code:
A
Abstract:
PURPOSE:To obtain a high quality N type crystal layer, without the effects of delicate change in heat treating conditions and a minute amount of impurities, by thermally diffusing In in Hg1-xCdxTe (0<=x<=1) and providing an N layer. CONSTITUTION:Hg and Cd, whose vapor pressure is high, are evaporated during the crystal growing from Hg1-xCdxTe and defects are liable to occur. The thin film crystal of the Hg1-xCdxTe incurs serious damage owing to said defects. Vacant holes, from which Hg and Cd are evacuated, become acceptors, and a P type semiconductor is obtained in general. Heat treatment of said P type crystal is performed under the vapor pressure of the Hg and Cd, and the P type crystal can be changed into an P or N type crystal, whose carrier concentration is further lower. Even in this case, however, the crystal is liable to receive the effects of heat treating conditions and impurities, and a high quality film is head to obtain. When In is thermally diffused on the entire or partial surface of an N or P type Hg1-xCdxTe layer, which has high resistivity and low mobility, a high quality N type crystal, which has low resistivity and high mobility, can be readily obtained, and various functional elements can be constituted.
Inventors:
NAGAHAMA KOUKI
OOKATA RIYOUJI
MUROTANI TOSHIO
OOKATA RIYOUJI
MUROTANI TOSHIO
Application Number:
JP11936482A
Publication Date:
January 19, 1984
Filing Date:
July 07, 1982
Export Citation:
Assignee:
MITSUBISHI ELECTRIC CORP
International Classes:
H01L31/10; H01L21/385; (IPC1-7): H01L31/10
Domestic Patent References:
| JPS5537932A | 1980-03-17 | |||
| JPS582078A | 1983-01-07 |
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