Title:
FORMATION OF SEMICONDUCTOR DEVICE INSULATION FILM
Document Type and Number:
Japanese Patent JPS5848938
Kind Code:
A
Abstract:
PURPOSE:To prevent disconnection and improve moisture proof characteristic by rotatingly coat the alcohol solution of Si(OH)4 on the insulating film and conductive layer provided on the semiconductor substrate in order to make smooth the surface and by laminating in succession the wiring layer and protection film thereon. CONSTITUTION:The PSG 14 is provided by the CVD method in such a manner as covering the field oxide film 12', oxide film 12 on the active region and poly-Si conductive layer 13 on the Si substrate 11 and it is then processed for 10min under a temperature of about 1,000 deg.C in order to obtain densed structure. Thereafter, when the alcohol solution of Si(OH)4 is coated rotatingly, the step portion of the PSG is covered with the high quality SiO2 glass and smoothed. In case a little amount of phosphorus P is contained in the solution, the thick film can be formed easily and film quality can also be improved. Then, an element is processed under the inactive gas at a temperature in the range of 800-1,000 deg.C in order to dense the structure of film 10. Then windows are opened on the layers 10, 14, 12 and the Al wiring layer 15 is provided therein. Thereafter, the element is covered with the insulating film 16, completing the manufacturing process. According to this structure, the ions in the insulating film is fixed and thereby a highly reliable apparatus can be obtained.
Inventors:
KAWASAKI HISAO
KOBAYASHI AKISHI
KOBAYASHI AKISHI
Application Number:
JP14637581A
Publication Date:
March 23, 1983
Filing Date:
September 18, 1981
Export Citation:
Assignee:
NIHON TEKISASU INSUTSURUMERUTS
International Classes:
H01L21/768; H01L21/31; (IPC1-7): H01L21/94
Domestic Patent References:
| JPS5160479A | 1976-05-26 | |||
| JPS4852185A | 1973-07-21 | |||
| JPS5162673A | 1976-05-31 |
Attorney, Agent or Firm:
Asamura Akira