PURPOSE: To obtain a high-speed, high-sensitivity, high-density and high-output photoelectric conversion device having an excellent interelement uniformity and having little dispersion of sensitivity characteristic by a method wherein, in an electrostatic induction transistor type photoelectric conversion device, the source region is constituted in a tunnel injection structure.
CONSTITUTION: A high-resistance epitaxial growing layer 13 is provided on an n+ type substrate 2 and a field oxide film 7 is provided by performing a wet oxidation. Then, regions for the gate of the SIT photoelectric conversion device and the tunnel injection part are decided according to the first mask-alignment, apertures are provided in the field oxide film 7 by performing an etching and very thin oxide films 15 are formed by performing a dry oxidation. Then, conductive layers 14 at a region, which is to become the source part in a tunnel injection structure, are left according to the second mask-alignment and the remaining parts are removed by performing an etching. An ion- implantation of boron B is performed in the whole surface and after an Si layer is formed on the whole surface, a thermal treatment of ion-implantation is performed. The surface of the Si layer on a p+ control gate diffusion region 6 is made to expose according to the third mask-alignment, then an Si3N4 film 10 is formed on the whole surface.
TANAKA AKIMASA
NISHIZAWA JUNICHI
TANAKA AKIMASA
| JPS5357769A | 1978-05-25 | |||
| JPS59107570A | 1984-06-21 |