Title:
MANUFACTURE OF SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JPS5825238
Kind Code:
A
Abstract:
PURPOSE:To obtain a highly reliable thin film in a semiconductor device where a sputtering film is formed on a substrate and the thin film is formed thereupon by removing a sputtering gas contained in the sputtering film to control the generation of a hollow through the heat treatment of the sputtering film under decompression before forming the thin film. CONSTITUTION:An Al alloy film 2 is formed on a substrate 1 by sputtering, and heat-treated for approx. 30min at 450 deg.C under the decompression of 3Pa, etc., thereby volatilizing a sputtering gas contained in the alloy film 2. After that an Si3N4 film 3 is formed on the film 2 by the plasma CVD. This constitution prevents the generation of a hollow 4 in the heat treatment process that follows, and enables a stable sputtering film to be obtained. In this constitution films other than those of Al and Si3N4 can be used, and different treatment conditions can be applied, preferably high vacuum, high temperature and extended length of time.
Inventors:
KOTANI HIDEO
HARADA HIROJI
HARADA HIROJI
Application Number:
JP12489781A
Publication Date:
February 15, 1983
Filing Date:
August 07, 1981
Export Citation:
Assignee:
MITSUBISHI ELECTRIC CORP
International Classes:
H01L21/285; H01L21/31; (IPC1-7): H01L21/285
Attorney, Agent or Firm:
Shinichi Kusano