Title:
MANUFACTURE OF SEMICONDUCTOR ELEMENT
Document Type and Number:
Japanese Patent JPS60132345
Kind Code:
A
Abstract:
PURPOSE:To perform the step-like metal coating process excellently by a method wherein arsenic ion is implanted in the step-like part of a semiconductor element reflowing the part later. CONSTITUTION:Within an n-channel MOS transistor element, a second insulating layer 15 made of phosphorus silicate glass (PSG) is formed on a first insulating layer 14 preliminarlly formed on a substrate 10 by means of thermal oxidation process. Then 8% of arsenic with radiation amount of 5E16/cm<2> is implanted in the PSG layer 15 at 150keV reflowing in N2 atmosphere containing 2.4% oxygen at 800 deg.C for 180min. At this time, the reflowing process is performed using arsenic with radiation amount of 5E16/cm<2> and implanting energy exceeding 90keV. Through these procedures, the steep step-like sides 20 may be rounded excellently. Therefore, any disconnection or thinning of a metal wire 19 upon the step part may be almost prevented from happening.
Inventors:
DEBAAATSUKUSU SHII CHIEN
HANGU SEN FUU
HANGU SEN FUU
Application Number:
JP25388984A
Publication Date:
July 15, 1985
Filing Date:
November 30, 1984
Export Citation:
Assignee:
HEWLETT PACKARD YOKOGAWA
International Classes:
H01L21/31; H01L21/768; H01L21/3105; H01L21/3115; (IPC1-7): H01L21/94
Domestic Patent References:
| JPS523390A | 1977-01-11 | |||
| JPS5766645A | 1982-04-22 | |||
| JPS57177541A | 1982-11-01 | |||
| JPS53140972A | 1978-12-08 |
Attorney, Agent or Firm:
Hasegawa Tsugio
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