Title:
PURE GREEN LIGHT-EMITTING DIODE AND ITS MANUFACTURE
Document Type and Number:
Japanese Patent JPS5922376
Kind Code:
A
Abstract:
PURPOSE:To enable the use of impurity compensation adapted for mass-producing capability, and to obtain the GaP pure green LED, brightness thereof is high and a color tone thereof is excellent, by setting mean doner impurity concentration in a p type GaP epitaxial layer to a specific value. CONSTITUTION:A melt tank 6 in which a melt 5 of GaP is entered is arranged onto a boat 4 encasing a GaP substrate 1, and the GaP substrate 1 and the melt 5 are brought into contact. S As a doner impurity is doped to the melt in 3X 10<-5>mol% to Ga. The cooling velocity of the melt is determined at 1 deg.C/min, and the melt is cooled slowly to 900 deg.C from 1,000 deg.C, thus growing an n type GaP epitaxial layer 2. Slow cooling is stopped at a temperature of 900 deg.C at a point of time when the growth treatment is completed, the temperature of the melt is kept at 900 deg.C, and the inside of a growth device is brought to a decompression state of 0.05Torr to evaporate S in the melt to the outside of the melt as shown in the arrow of a solid line. The melt is cooled slowly at cooling velocity at 1 deg.C/ min to 800 deg.C from 900 deg.C while supplying the inside of the melt with Zn as an acceptor impurity in the gaseous phase as shown in the shown in a broken line, thus growing the p type GaP epitaxial layer 3.
Inventors:
KAWABATA TOSHIHARU
FURUIKE SUSUMU
MATSUDA TOSHIO
IWASA HITOO
FURUIKE SUSUMU
MATSUDA TOSHIO
IWASA HITOO
Application Number:
JP13273582A
Publication Date:
February 04, 1984
Filing Date:
July 28, 1982
Export Citation:
Assignee:
MATSUSHITA ELECTRIC IND CO LTD
International Classes:
H01L21/208; H01L33/30; (IPC1-7): H01L21/208; H01L33/00
Attorney, Agent or Firm:
Akira Kobiji (2 outside)